Intrinsic Parameter Fluctuations in Sub-10 nm generation UTB SOI MOSFETs
نویسنده
چکیده
Ultra Thin Body (UTB) SOI are promising alternatives for extending the MOSFET scaling. However, intrinsic parameter fluctuations still remains as one of the major challenges for the ultimate scaling and integration of UTB SOI MOSFETs. In this paper, using 3D statistical numerical simulations we investigate the impact of random discrete dopants, body thickness variations and line edge roughness on the magnitude of intrinsic parameter fluctuations in UTB SOI MOSFETs. The UTB devices are scaled to physical channel lengths of 10, 7.5 and 5 nm corresponding to the long term requirements of 2005 edition of the International Technology Roadmap for Semiconductors (ITRS).
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